Samsung SSD MZ-V9P1T0CW 1TB M.2 NVMe 990 PRO with Heatsink PCIe 4.0 Retail
Status: Available
SKU: 273472
Vendor: Samsung
MPN: MZ-V9P1T0CW
UPC: 887276656984
EAN:
Our Ultimate SSD
Reach near max performance with PCIe®4.0.
The in-house controller's smart heat control delivers our best power efficiency while maintaining ferocious performance that always keeps you at the top of your game.

Maximized PCIe®4.0 speed
Huge speed boost.
Get random read/write speeds that are 40%/55% faster than 980 PRO. Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe® 4.0.123 Fly high in gaming, video editing, 3D modeling, data analysis and more.

Breakthrough power efficiency
Get more performance while using less power. Enjoy up to 50% improved performance per watt over 980 PRO*.
* 980 PRO Sequential Read/Write - 1,129/877 MB/Watt, 990 PRO Sequential Read/Write - 1380/1319 MB/Watt based on test result of 1TB capacity model.

Smart thermal control
Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating. Play confidently with stable thermal power and minimal fan noise even during heavy-graphic gaming. With its slim size, 990 PRO with Heatsink is a perfect fit for PlayStation®5, desktops and laptops that meet the PCI-SIG®D8 standard.
* PCI-SIG®D8 standard spec: 8.8mm

The champion maker
A more than 55% improvement in random performance* enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games**. With RGB LED lights, Heatsink’s futuristic design adds style to function
*As compared to 980 PRO
**Direct Storage technology from Microsoft loads games faster than before by leveraging the multiple GB/sec speed of modern NVMe SSDs.
General Feature
Application
Client PCs, Game Consoles
Capacity
1,000GB (1GB equals 1 Billion byte by IDEMA)
noteActual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Interface
PCIe Gen 4.0 x4, NVMe 2.0
Form Factor
M.2 (2280)
Storage Memory
Samsung V-NAND 3-bit MLC
Controller
Samsung in-house Controller
Cache Memory
Samsung 1GB Low Power DDR4 SDRAM
Performance
Sequential Read
Up to 7,450 MB/s (Performance may vary based on system hardware and configuration)
Sequential write
Up to 6,900 MB/s (Performance may vary based on system hardware and configuration)
Random Read (4KB, QD32)
Up to 1,200,000 IOPS (Performance may vary based on system hardware and configuration)
Random Write (4KB, QD32)
Up to 1,550,000 IOPS (Performance may vary based on system hardware and configuration)
Random Read (4KB, QD1)
Up to 22,000 IOPS (Performance may vary based on system hardware and configuration)
Random Write (4KB, QD1)
Up to 80,000 IOPS (Performance may vary based on system hardware and configuration)